4n60c datasheet pdf download

Utc 4 amps, 600 volts nchannel power mosfet,alldatasheet, datasheet, datasheet search site for. Qwr502a42 datasheet, cross reference, circuit and application notes in pdf format. Apr 04, 2015 4n60b datasheet pdf download pdf 2249741219049103. This advanced technology has been especially tailored to minimize onstate resistance, provide superior switching. Id 20 a feature new revolutionary high voltage technology ultra. Y2010dn datasheet pdf, y2010dn datasheet, y2010dn pdf, y2010dn pinout, y2010dn data, circuit, ic, manual, substitute, parts, schematic, reference. The utc 4n60 is a high voltage power mosfet and is designed to have better characteristics, such as fast switching time, low gate charge, low onstate. Csd17309q3 30v nchannel nexfet power mosfet datasheet.

Oct 01, 2015 y2010dn datasheet pdf, y2010dn datasheet, y2010dn pdf, y2010dn pinout, y2010dn data, circuit, ic, manual, substitute, parts, schematic, reference. Units conditions is continuous source current mosfet symbol body diode showing the ism pulsed source current integral reverse. Recent listings manufacturer directory get instant insight into any electronic component. Utc, alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors. Id 20 a feature new revolutionary high voltage technology ultra low gate charge. The utc 4n60 is a high voltage power mosfet and is designed to have better characteristics, such as. An important notice at the end of this data sheet addresses availability, warranty, changes, use in safetycritical applications, intellectual property matters and. Fqp8n60cfqpf8n60c 600v nchannel mosfet general description these nchannel enhancement mode power field effect transistors are produced using fairchilds proprietary, planar stripe, dmos technology. Mosiii 2sk2700 chopper regulator, dcdc converter and motor drive. Tpcp8012 12v 300v mosfets toshiba electronic devices. Spp11n60c3 spi11n60c3, spa11n60c3 cool mos power transistor.

Datasheet search engine for electronic components and semiconductors. Gt30j124 transistor datasheet, gt30j124 equivalent, pdf data sheets. This silicon carbide power mosfet is produced exploiting the advanced, innovative properties of wide bandgap materials. Please note the new package dimensions arccording to pcn 20094a rev. Electronic manufacturer, part no, datasheet, electronics description. Please note the new package dimensions arccording to pcn. The ufd series is designed for applications such as motor. Offer 4n60c fsc from kynix semiconductor hong kong limited. Aa ordering information ordering number pin assignment lead free halogen free package 1 2 3456 7 8 packing.

C absolute maximum ratings tc 25, unless otherwise specifiedparametersymbol datasheet search, datasheets, datasheet search site for electronic components and semiconductors, integrated circuits, diodes and other semiconductors. B1 igbt sgh80n60ufd sgh80n60ufd ultrafast igbt general description fairchilds ufd series of insulated gate bipolar transistors igbts provides low conduction and switching losses. If the checkbox is invisible, the corresponding document cannot be downloaded in batch. Fqpf8n60c transistor datasheet, fqpf8n60c equivalent, pdf data sheets. Utc nchannel power mosfet,alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors. Toshiba field effect transistor silicon n channel mos type. Jun 26, 2017 g80n60 datasheet vces 660v, ultrafast igbt fairchild, sgh80n60ufd datasheet, g80n60 pdf, g80n60 pinout, g80n60 equivalent, circuit, g80n60 schematic. Piv volts 65 90 90 45 25 30 100 100 75 40 25 40 30. G80n60 datasheet vces 660v, ultrafast igbt fairchild, sgh80n60ufd datasheet, g80n60 pdf, g80n60 pinout, g80n60 equivalent, circuit, g80n60 schematic. If you agree to this agreement on behalf of a company, you represent and warrant that you have authority to bind such company to this agreement, and your agreement to these terms will be regarded as the agreement of such company.

Part number top mark package reel size tape width quantity fqp5n60c fqp5n60c to220 na na 50 units packing method tube fqpf5n60c fqpf5n60c to220f tube na na 50 units notes. Unisonic technologies, 4n60, 4 amps, 600 volts nchannel power mosfet. Germanium diodes 1 cold bonded germanium diodes in do7 package mm type aa1 aa117 aa118 aa119 aa8 aa143 aa144 aaz15 aaz17 aaz18 oa47 oa79 oa90 oa91 oa95 oa99 1n34a 1n38a 1n60a 1n100a 1n27q 1n276 1n277 1n695 1n695a 1n933 1n949 1n3287 1n3592 1n3666 1n3773 peak inverse voltage min. C marking datasheet search, datasheets, datasheet search site for electronic components and semiconductors, integrated circuits, diodes and other semiconductors. Data sheet mgp4n60e insulated gate bipolar transistor nchannel enhancementmode silicon gate this insulated gate bipolar transistor igbt uses an advanced igbt in to220 termination scheme to provide an enhanced and reliable high 4. An important notice at the end of this data sheet addresses availability. Description 2006 fairchild semiconductor corporation fqp6n90c fqpf6n90c rev. O absolute maximum ratings tc25c unless otherwise specified parameter symbol ratings unit drainsource voltage vdss 600 v gatesource voltage vgss 30 v avalanche current note 2 iar 10 a drain current continuous id 10 a pulsed note 2 idm 38 a avalanche energy. Utc 4 amps, 600 volts nchannel power mosfet,alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors. Please note the new package dimensions arccording to pcn 2009. Id l high speed power switching l hard switched and high frequency circuits 650v 155m 22a l leadfree benefits d l ultra low gate charge. Id l high speed power switching l hard switched and high frequency circuits 650v 155m 22a l leadfree benefits d l ultra low gate charge qg results in simple. Apr 04, 2015 4n60 datasheet pdf 4n60 datasheet pdf 4n60 datasheet pdf download.